RFHIC, a global leader in the design and manufacture of RF & Microwave component with a comprehensive product portfolio from discretes to integrated high power amplifiers, utilizes the most sophisticated technologies including hybrid solutions of GaN (Gallium Nitride) and is a cost effective solution provider to the customers. RFHIC has a strong relationship with CREE to provide the most mature GaN technology in the market. RFHIC is an ISO 9001 and 14001 certified company, providing reliable & dependable products.
Being a ‘One-stop facility’ solution provider, we are capable of processing MMIC, Die Attach, Wire Bonding, Packaging, Chip on Board, Hybrid, SMT Line, RF Test Line, and Quality Control actions all in our facility. In addition, the Restriction of Hazardous Substances Directive (RoHS), and Lead (Pb)-Free are some of the programs we have implemented.
RFHIC and CREE
RFHIC entered an agreement for Cree Inc. of Durham, NC, USA to supply GaN-on-SiC transistors for RFHIC’s GaN HEMT amplifier product families. Cree and RFHIC also entered into a marketing cooperation agreement to enable deeper market penetration of GaN HEMT solutions by leveraging Cree’s wafer foundry capability coupled with RFHIC’s capabilities in packaging, amplifier integration, volume assembly and pallet amplifier design. “We initially pursued a GaN-on-Silicon HEMT approach, but converted our product line and future direction to Cree’s GaN-on-SiC HEMT technology based on its superior thermal and electrical characteristics as well as its outstanding robustness and reliability,” said Samuel Cho, RFHIC’s CTO. “The combination of Cree’s and RFHIC’s core strengths will accelerate GaN HEMT market penetration in the cellular infrastructure, two-way communication, CATV amplifier, and a variety of other emerging market segments,” added Jim Milligan, Cree’s director of RF and Microwave products.